Cracking Yield Dependence of InP Growth by Chemical Beam Epitaxy
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概要
- 論文の詳細を見る
A high P_2-yield cracking cell was newly developed for chemical beam epitaxy. Dramatic improvements in crystal quality were obtained in comparison to a lesser-yield cell. The use of tantalum baffles in a PBN-made cell significantly increased the P_2 yield when comparing it to a cell using PBN baffles. The growth mechanism of InP differed from cells with different P_2 yields. For the same PH_3 and TMI flow rates, higher growth rates and narrower photoluminescence linewidths were obtained with a higher P_2 yield cell. Silicon and beryllium doping incorporation mechanisms were also found to be different with these cells.
- 社団法人応用物理学会の論文
- 1990-10-20
著者
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YOKOUCHI Noriyuki
Tokyo Institute of Technology, Precision & Intelligence Laboratory
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Iga Kenichi
Tokyo Institute Of Technology
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YOKOUCHI Noriyuki
Yokohama Research and Development Laboratories, Furukawa Electric Co.Ltd.
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Uchida T
Hiroshima Univ. Graduate School Of Biomedical Sci. Hiroshima Jpn
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Koyama Fumio
Tokyo Inst. Technol. Yokohama Jpn
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Yokouchi N
Yokohama Research And Development Laboratories Furukawa Electric Co.ltd.
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UCHIDA Takashi
Tokyo Institute of Technology, Precision & Intelligence Laboratory
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Uchida Toshi
Tokyo Institute of Technology
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MISE Kazuaki
Tokyo Institute of Technology
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Mise K
Hiroshima Univ. Higashi‐hiroshima Jpn
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