Relaxation and Delay in Oscillations of GaInAsP/InP DH-Lasers
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-11-05
著者
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IGA Kenichi
Tokyo Institute of Technology, Nagatsuta Campus, Research Laboratory of Precision Machinery and Elec
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Iga Kenichi
Tokyo Institute Of Technology
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Wakao Kiyohide
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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WAKAO Kiyohide
Tokyo Institute of Technology, Research Laboratory of Precision Machinery and Electronics
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MORITA Hideki
Tokyo Institute of Technology, Research Laboratory of Precision Machinery and Electronics
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KAMBAYASHI Toshio
Tokyo Institute of Technology, Research Laboratory of Precision Machinery and Electronics
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Morita Hideki
Tokyo Institute Of Technology Research Laboratory Of Precision Machinery And Electronics
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Kambayashi Toshio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology:(present Ad
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IGA Kenichi
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
関連論文
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- Intensity Noise of GaAlAs / GaAs Surface Emitting Laser
- Refractive Index Variation in GaInAsP/InP Quantum Confined Structures Grown by Chemical Beam Epitaxy
- Design and Fabrication of InGaAs/GaAs Quantum Wires for Vertical-Cavity Surface-Emitting Lasers
- Improved Theory for Carrier Leakage and Diffusion in Multiquantum-well Semiconductor Lasers
- Strained Layer Multiquantum Barriers with Improved Carrier Injection and Confinement
- Strained-Layer Multi-Quantum Barriers for Reducing Hot Electron Leakage in Long-Wavelength Semiconductor Lasers
- Carrier Transport in p-Type GaInAsP/InP Distributed Bragg Reflectors
- Numerical Method to Fit the Refractive Index Profile of Planar Microlenses Made by Ion Exchange Techniques
- Transverse-Mode Characteristics of InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers Considering Gain Offset
- Evaluation of MQW Wafer for Surface-Emitting Laser by X-Ray Diffraction
- GaAlAs/GaAs MOCVD Growth for Surface Emitting Laser
- Electron Wave Reflection by Multiquantum Barrier
- Potential Barrier Height Analysis of AlGaInP Multi-Quantum Barrier (MQB)
- Photoluminescence Study of Electron Wave Confinement in Multi-Quantum Barrier (MQB)
- Growth and Characterization of Vertical-Cavity Surface-Emitting Lasers Grown on (311)A-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Focusing Characteristics of Convex-Shaped Distributed-Index Microlens
- GaInAsP/InP Facet Lasers with Chemically-Etched End Mirrors
- Low Threshold GaInAsP Lasers with Semiconductor/Air Distributed Bragg Reflector Fabricated by Inductively Coupled Plasma Etching
- Theoretical and Experimental Estimations of Photon Recycling Effect in Light Emitting Devices with a Metal Mirror
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- Fabrication of Planar Microlens by Transverse Electromigration Method
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- Relaxation and Delay in Oscillations of GaInAsP/InP DH-Lasers
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- Threshold Condition and Design of Surface Emitting GaInAsP/InP Injection Lasers : B-2: LD AND LED-1
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- Room-Temperature Observation of Excitonic Absorption in Ga_xIn_As/InP (0.2≤x≤0.47) Quantum Wells Grown by Chemical Beam Epitaxy
- GaInAs/InP Quantum Wells and Strained-Layer Superlattices Grown by Chemical Beam Epitaxy
- Highly Beryllium-Doped GaInAs Grown by Chemical Beam Epitaxy
- Cracking Yield Dependence of InP Growth by Chemical Beam Epitaxy
- Study of Inelastic Scattering Effect in Unstrained and Strain-Compensated GaInAs/GaInP Multiquantum Barriers
- Strain-Compensated Multi-Quantum Barriers for Reduction of Electron Leakages in Long-Wavelength Semiconductor Lasers
- Low-Threshold GaInAsP/InP Transmission-Type Surface Emitting Laser
- Parallel Optical Walsh Expansion in a Pattern Recognition Preprocessor Using Planar Microlens Array
- Change of Refractive Index Profile during Heat-Treatment Process in Fabricating Plastic Focusing Fiber Lens
- GaInAsP/InP CBH Surface-Emitting Laser with a Dielectric Multilayer Reflector
- Array of Distributed-Index Planar Micro-Lenses Prepared from Ion Exchange Technique
- Improvement of a Flat Surface Circular Buried Heterostructure GaInAsP/InP Surface Emitting Laser
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