GaInAsP/InP DH Laser with a Current Blocking Layer Made by Be Implantation
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概要
- 論文の詳細を見る
A GaInAsP/InP laser (λ=1.3 μm) with a current blocking layer made by Be implantation has been fabricated. Be-ions were implanted with 70 keV into an n-InP substrate at room temperature and 2.2 × 10^<14> cm^<-2> of dose. Thermal annealing was applied in a furnace during the LPE (Liquid Phase Bpitaxial) growth. The breaking of the forward bias associated with the blocking region was 2V. The minimum threshold current was 160 mA for 2.5μm width of waveguide and 250μm cavity length.
- 社団法人応用物理学会の論文
- 1982-10-20
著者
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IGA Kenichi
Tokyo Institute of Technology, Nagatsuta Campus, Research Laboratory of Precision Machinery and Elec
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Iga Kenichi
Tokyo Institute Of Technology
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Moriki Kazunori
Tokyo Institute Of Technology
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Uchiyama Seiji
Tokyo Institute Of Technology
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FURUKAWA Seijiro
Tokyo Institute of Technology
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