GaAlAs/GaAs Surface Emitting Laser with High Reflective TiO_2/ SiO_2 Multilayer Bragg Reflector

概要

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First, it has been made clear that the important parameters of the SE laser are its active layer thickness d and the mirror reflectivity R. The required values of three parameters such as threshold gain g_<th>, threshold current density J_<th>, and differencial quantum efficiency η_d are obtained for d=2〜3 μm and R=95%. At this condition g_<th> is estimated as 300 cm^<-1> (N_<th>=3×10^<18>cm^<-3>), J_<th> is 25〜30 kA/cm^2, and η_d is 40%. Next, in order to obtain a reflectivity as high as 95%, a TiO_2/SiO_2 multilayer Bragg reflector was introduced. It was found that a good quality TiO_2 film could be evaporated by leaking oxygen through a variable leak valve to hold l×10^<-4> Torr. Then, a 7-pair TiO_2/SiO_2 multilayer Bragg reflector was fabricated; its peak reflectivity was 95% at 8800Å. A room-temperature pulsed operation of a GaAlAs/GaAs SE layer was achieved and the minimum threshold current was reduced to as low as 150 mA when a round mesa was fabricated to 20μm in diam.
社団法人応用物理学会の論文
1987-03-20