Improvement of a Flat Surface Circular Buried Heterostructure GaInAsP/InP Surface Emitting Laser
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概要
- 論文の詳細を見る
The surface quality of a flat surface circular buried heterostructure (FCBH) is improved by reducing the diameter of circular mesa to 〜15 μmφ. The minumum threshold current is I_<th>=12 mA at 77 K under CW condition, which is the lowest value ever obtained for GaInAsP/InP surface emitting lasers.
- 社団法人応用物理学会の論文
- 1988-08-20
著者
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Iga Kenichi
Tokyo Institute Of Technology
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Iga Kenichi
Tokyo Institute Of Technology Research Laboratory Of Precision Machinery And Electronics
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Koyama Fumio
Tokyo Inst. Technol. Yokohama Jpn
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Koyama Fumio
Tokyo Institute Of Technology Research Laboratory Of Precision Machinery And Electronics
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KAWASAKI Hideshi
Tokyo Institute of Technology, Research Laboratory of Precision Machinery and Electronics
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Kawasaki Hideshi
Tokyo Institute Of Technology Research Laboratory Of Precision Machinery And Electronics
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IGA Kenichi
Tokyo Institute of Technology, Research Laboratory of Precision Machinery and Electronics
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