A Novel Short-Cavity Laser with Deep-Grating Distributed Bragg Reflectors

概要

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We have proposed a novel short-cavity laser with deep-grating distributed Bragg reflectors (DBRs). We monolithically fabricated a 0.98 µm InGaAs/AlGaAs device and 1.55 µm GaInAsP/InP device using electron beam lithography and a reactive ion beam etching technique. The lasing operation of both devices was achieved at room temperature. From a comparison of the threshold current from the experimental result with that from the theoretical result, the reflectivity of formed DBRs was estimated to be less than 30%. The theory also predicts that the ideal DBR exhibits a high reflectivity over 97% even with 3 periods of grating. It achieves lasing operation with a threshold current less than 100 µA using a cavity shorter than 10 µm. This high performance is realized by reducing the surface roughness and damage to etched sidewalls and improving the reflectivity of the DBR.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
1996-02-28