Low-Threshold GaInAsP/InP Transmission-Type Surface Emitting Laser
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概要
- 論文の詳細を見る
A transmission-type 1.3-μm GaInAsP/InP surface emitting (SE) laser has been demonstrated for new application of SE lasers. A threshold current density as low as 530 A/cm^2 (I_<th>=2.8 mA) was obtained under the 77 K cw condition. This is the lowest value of 1.3-μm surface emitting lasers ever reported. Some detailed spectral characteristics near the threshold have been measured and the possibility of narrow-band active vertical-cavity filters is suggested.
- 社団法人応用物理学会の論文
- 1992-02-15
著者
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Iga Kenichi
Tokyo Institute Of Technology
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Iga Kenichi
Tokyo Institute Of Technology Nagatsuta Campus Precision And Intelligence Laboratory
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Koyama Fumio
Tokyo Inst. Technol. Yokohama Jpn
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KUBOTA Shinichi
Tokyo Institute of Technology, Nagatsuta Campus, Precision and Intelligence Laboratory
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Koyama Fumio
Tokyo Institute Of Technology Nagatsuta Campus Precision And Intelligence Laboratory
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Kubota Shinichi
Tokyo Institute Of Technology Nagatsuta Campus Precision And Intelligence Laboratory
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