Highly Beryllium-Doped GaInAs Grown by Chemical Beam Epitaxy
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概要
- 論文の詳細を見る
Beryllium-doped GaInAs layers were grown on InP by chemical beam epitaxy and were electrically characterized. A hole concentration of as high as 2×10^<20> cm^<-3> at a growth temperature of 540℃ was obtained without degrading the surface morphology. Highly doped growth was possible without changing any growth parameter. Hole concentrations were also investigated at different growth temperatures for a given Be cell temperature. Hole concentrations were found to increase with decreasing growth temperatures. Furthermore, we did not observe lattice mismatch (Δa/a<3×10^<-4>) for any of the doped samples grown under the same growth condition as for undoped samples.
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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YOKOUCHI Noriyuki
Tokyo Institute of Technology, Precision & Intelligence Laboratory
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Iga Kenichi
Tokyo Institute Of Technology
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YOKOUCHI Noriyuki
Yokohama Research and Development Laboratories, Furukawa Electric Co.Ltd.
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Uchida T
Hiroshima Univ. Graduate School Of Biomedical Sci. Hiroshima Jpn
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Koyama Fumio
Tokyo Inst. Technol. Yokohama Jpn
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Yokouchi N
Yokohama Research And Development Laboratories Furukawa Electric Co.ltd.
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UCHIDA Takashi
Tokyo Institute of Technology, Precision & Intelligence Laboratory
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Uchida Toshi
Tokyo Institute of Technology
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