A Trial Fabrication of Circular Buried Heterostructure (CBH) GaAlAs/GaAs Surface Emitting Laser by Using Selective Meltback Method
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概要
- 論文の詳細を見る
For the purpose of introducing a current-confining structure to a GaAlAs/GaAs surface emitting (SE) Baser, a circular buried heterostructure (CBH) was proposed. A selective meltback method was employed in order to avoid the oxidization of GaAlAs. The threshold current of an SE laser was 300 mA under a pulsed condition at room temperature. The nominal threshold current density was 20 kA/cm^2/μm.
- 社団法人応用物理学会の論文
- 1986-08-20
著者
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IGA Kenichi
Tokyo Institute of Technology, Nagatsuta Campus, Research Laboratory of Precision Machinery and Elec
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Odagawa Tetsufumi
FUJITSU LABORATORIES LTD.
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Iga Kenichi
Microsystem Research Center P & I Lab . Tokyo Institute Of Technology
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Iga Kenichi
Tokyo Institute Of Technology
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Kinoshita S
Toshiba Corp. Yokohama Jpn
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KINOSHITA Susumu
Tokyo Institute of Technology, Nagatsuta Campus
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ODAGAWA Tetsufumi
Tokyo Institute of Technology, Nagatsuta Campus
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