Improvement of Responsivity of Antenna-Coupled Warm Carrier Device Using Polycrystalline Ge Thin Films
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概要
- 論文の詳細を見る
Electrical properties of Ge thin films evaporated on Si_3N_4 substrates were improved by introducing a heat treatment after the deposition. The Hall mobility of the deposited films increased with increasing heat-treatment temperature and was 280 cm^2/V・s for a hole concentration of 6×10^<17> cm^<-3> at a heat-treatment temperature of 9O0℃. This value of the Hall mobility was about three times larger than that obtained for Ge films without heat treatment. A point-contact warm carrier device was also fabricated using evaporated Ge film with heat treatment, and the detected voltage induced by CO_2 laser radiation was measured. The fabricated device operated as an antenna-coupled device and the detected voltage was about ten times higher than that obtained using a device without heat treatment.
- 社団法人応用物理学会の論文
- 1996-08-15
著者
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SHIMIZU Takashi
Department of Neurosurgery, Saiseikai Kurihashi Hospital
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Uchida Takashi
Department of Urban Engineering, Osaka City University
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Yasuoka Y
National Defense Acad. Yokosuka‐shi Jpn
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Yasuoka Yoshizumi
Department Of Electrical And Electronic Engineering National Defense Academy
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Shimizu T
Univ. Occupational And Environmental Health Jpn
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Shimizu Tadao
Department Of Physics University Of Tokyo
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Shimizu T
Department Of Electrical And Electronic Engineering Kanazawa University
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Shimizu T
Faculty Of Engineering Chiba University
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Shimizu T
Chiba Univ. Chiba Jpn
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Uchida T
Hiroshima Univ. Graduate School Of Biomedical Sci. Hiroshima Jpn
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Uchida Takashi
Department Of Electronic Engineering National Defense Academy
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Shimizu Takashi
Department Of Neurosurgery Juntendo University School Of Medicine
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Shimizu Takashi
Department Of Animal Sciences Nihon University
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Uchida Takashi
Department of Clinical Pharmaceutical Sciences, School of Pharmaceutical Sciences, Kumamoto University
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