Thermally Stimulated Current of Vacuum Deposited PbSe Films
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概要
- 論文の詳細を見る
PbSe films were oxidized at 200℃ in order to increase photosensitivity. The maximum photosensitivity was obtained in the weakly p-type region. In this region the response time of the film was about 200 μ sec at liquid nitrogen temperature. On the other hand, in the p-type region a very long recovery of the photocurrent appeared after the light was turned off. This slowing-down phenomenon of the response speed may be caused by deep traps for electrons excited optically in the p-type film which are revealed by measuring the thermally stimulated current. The depth of the traps is about 0.15 eV below the bottom of the conduction band.
- 社団法人応用物理学会の論文
- 1974-11-05
著者
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Wada Masanobu
Department Of Electronic Engineering Faculty Of Engineering Tohoku Univeristy
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Wada Masanobu
Department Of Electronic Engineering Tohoku University
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Yasuoka Yoshizumi
Department Of Electrical And Electronic Engineering National Defense Academy
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Yasuoka Yoshizumi
Department Of Electronic Engineering Tohoku University:(present Address)department Of Electrical Eng
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