Effects of Annealing in Cd or S Vapor on Photoelectric Properties of CdS Single Crystals

概要

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Single crystals of CdS were grown from the melt under high Ar pressures and annealed in Cd or S vapor. The annealing in Cd vapor caused emission at 501 nm, 509 nm and 600 nm. The emission at 501 nm is due to the transition between the valence band and a donor (probably S vacancy or interstitial Cd) with the binding energy of 0.106 eV. The emission at 600 nm is due to the transition between the valence band and a donor with the binding energy of about 0.5 eV. The annealing in S vapor caused I_1-line and emission at 730 nm, 830 nm and 1020 nm. The emission at 730 nm is a self-activated emission. It is not clear yet that the emission at 830 nm is due to Cu impurity or native defects. The luminescence center of the emission at 1020 nm is identical to the sensitizing center for photoconduction and probably composed of a native defect such as a Cd vacancy.
社団法人応用物理学会の論文
1976-12-05