Photoconductivity of PbSe Films
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概要
- 論文の詳細を見る
P-type PbSe films were converted to n-type through the quasi-intrinsic by repeating the short bakes at 400℃ in the pressure of 1×10^<-8> Torr. The dark current, photo-current, response time, thermo-electric power and temperature dependence of conductivity were measured after each operation of short bakes. The highest photosensitive film was obtained at slightly p-type region. The temperature dependence of photoconductivity at various intensities of illumination and V-I characteristics were measured. It is concluded that a photosensitive film has fully developed potential barriers in it. However, a reduction in the height of these barriers with illumination is not the dominant factor in photoconductivity.
- 社団法人応用物理学会の論文
- 1970-05-05
著者
-
Wada Masanobu
Department Of Electronic Engineering Faculty Of Engineering Tohoku Univeristy
-
Yasuoka Yoshizumi
Department Of Electrical And Electronic Engineering National Defense Academy
-
Yasuoka Yoshizumi
Department Of Electronic Engineering Tohoku University
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