Electrical Properties of CuI Thin Films
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概要
- 論文の詳細を見る
Hole concentration of CuI thin film decreased but Hall mobility increased with the rise of reaction temperature of copper films with iodine vapor. The heat-treatment of CuI film in vacuum brings out the decrease of hole concentration because of the escape of excess iodine from the film. Oxygen diffuses into the bulk of Cut film at high temperatures and raises the conductance of the film. The activation energy for diffusion was determined as 0.82 eV. Water vapor is chemisorbed on the surface of CuI and lowers the conductance at room temperature.
- 社団法人応用物理学会の論文
- 1971-07-05
著者
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Wada Masanobu
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Wada Masanobu
Department Of Electronic Engineering Faculty Of Engineering Tohoku Univeristy
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WATANABE Hideo
Department of Pediatric Dentistry, School of Dentistry, Aichi-Gakuin University
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Kokubun Yoshihiro
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Kokubun Yoshihiro
Department Of Electronic Engineering Faculty Of Engineering Tohoku Unuversity
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Watanabe Hideo
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Wada Masanobu
Department Of Electronic Engineering Faculty Of Engineering Tohoku Unuversity
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Watanabe Hideo
Department Of Biological Products Hikari Plant Takeda Chemical Industries
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WATANABE Hideo
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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WADA Masanobu
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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