Effects of Ambient Gases on Current-Voltage Characteristics of Pt-GaN Schottky Diodes at High Temperatures : Semiconductors
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概要
- 論文の詳細を見る
The electrical characteristics of a Pt Schottky barrier to n-type GaN grown by metalorganic chemical vapor deposition and the effects of ambient gases on their properties have been investigated at elevated temperatures of up to 600℃. The current-voltage (I-V) characteristics of Schottky diodes remained steady at high temperatures of up to 600℃, although the rectifying ratio decreased with a rise in temperature. The I-V characteristics of Pt-GaN Schottky diodes depended on the ambient gases. Hydrogen decreases the barrier height of Pt-GaN Schottky diodes, whereas oxygen increases it. The barrier height changed significantly in the temperature range from 100 to 400℃ due to the change of atmosphere from H_2 to O_2.
- 社団法人応用物理学会の論文
- 2001-07-01
著者
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Kokubun Yoshihiro
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Kokubun Yoshihiro
Department Of Electronic Materials School Of Science And Engineering Ishinomaki Senshu University
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Nakagomi Shinji
Department Of Electronic Materials School Of Science And Engineering Ishinomaki Senshu University
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SETO Taichiro
Department of Electronic Materials, School of Science and Engineering, Ishinomaki Senshu University
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Seto Taichiro
Department Of Electronic Materials School Of Science And Engineering Ishinomaki Senshu University
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