Hydrogen-Sensitive Property of Switching Device with a Pd-Si Tunnel Metal Insulator Senrieonductor Structure
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概要
- 論文の詳細を見る
The effect of atmosphere on the switching device with a Pd-Si tunnel metal insulator semiconductor (MIS)structure is studied. The MIS device with the Pd-insulator-(n)Si-(p^+)Si structure reveals a negative-resistance switching property. In addition, the threshold voltage of switching is sensitive to hydrogen gas concentration.The current-voltage characteristics of the MISS device were measured for various conditions of gases in detail,with particular attention on the effect of oxygen. We can obtain information on work function by measuring the capacitance-voltage characteristics and the temperature dependence of the current in the "off-state" region. The variation of the work function with change of atmosphere was confirmed for the switching device with the Pd-Si tunnel MIS structure, for the first time.
- 社団法人応用物理学会の論文
- 1994-11-15
著者
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Yamamoto Tatsuo
Department Of Anesthesiology Graduate School Of Medical Science Kumamoto University
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Nakagomi Shinji
Department of Information Technology and Electronics, School of Science and Engineering, Ishinomaki
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Yamamoto Tatsuo
Department Of Electronic Materials School Of Science And Engineering Ishinomaki Senshu University
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Nakagomi S
Ishinomaki Senshu Univ. Ishinomaki Jpn
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Nakagomi Shinji
Department Of Electronic Materials School Of Science And Engineering Ishinomaki Senshu University
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