n-InSb Point Contact Warm Carrier Infrared Laser Detectors : Waves, Optics and Quantum Electronics
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概要
- 論文の詳細を見る
Point-contact warm carrier devices were fabricated using n-type InSb instead of p-type Ge. The incident angle dependence of the detected voltage was measured at l0.6μm and 118μm laser radiations. It was confirmed that the detected signal of the fabricated devices was due to the induced current by antenna and not due to the photon-drag effects.
- 社団法人応用物理学会の論文
- 1988-05-20
著者
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Inoue N
National Defense Acad. Yokosuka Jpn
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Inoue N
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Yasuoka Yoshizumi
Department of Electronic Engineering, The National Defense Academy
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Yasuoka Yoshizumi
Department Of Electrical And Electronic Engineering National Defense Academy
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Inoue Narumi
Department Of Electrical And Elecronic Engineering National Defense Academy
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OKUDA Takahisa
Department of Electrical Engineering, National Defense Academy
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Okuda Takahisa
Department Of Electrical Engineering National Defense Academy
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