Surface and Interface Modifications of Aluminum Thin Films on Silica Glass Substrate Using 157 nm F2 Laser for Selective Metallization
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概要
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A 157 nm F2 laser induced strong oxidation of an Al thin film surface, allowing it to show chemical resistance to KOH aqueous solution used for selective metallization on silica glass or native oxide Si substrate. The strong oxidation reactions on the surface and in the depth direction were confirmed by X-ray photoelectron spectroscopy. A high adhesion strength of 663 kgf/cm2 between Al and silica glass was also obtained for the F2-laser-irradiated sample, compared with that of the nonirradiated sample, 16 kgf/cm2. The suitable thickness of Al thin films for the F2-laser-irradiated surface and interface modifications was examined to be approximately 20 nm. The mechanism of the F2-laser-induced interface modification was discussed regarding the dependence of substrate material and the analyses of the chemical bonding state of silica glass underneath Al thin films.
- 2011-02-25
著者
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Inoue Narumi
Department Of Electrical And Elecronic Engineering National Defense Academy
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Okoshi Masayuki
Department Of Electrical And Electronic Engineering National Defense Academy
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Nojiri Hidetoshi
RENIAS Co., Ltd., Mihara, Hiroshima 729-0473, Japan
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Iwai Kazufumi
Department of Electrical and Electronic Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
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Nojiri Hidetoshi
RENIAS Co., Ltd., 200-76 Obara, Nutanishi, Mihara, Hiroshima 729-0473, Japan
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