P-N Conversion of Poly-Ge Films Fabricated by Plasma Assisted Deposition
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概要
- 論文の詳細を見る
Polycrystalline Ge films have been fabricated on glass substrate by using a plasma-assisted deposition method. The polarity of Hall voltage of the films deposited at RF power of lower than 30 W corresponds to positive which indicates p-type conduction, but the polarity reverses in the films fabricated at RF power of higher than 50 W. This phenomenon is only seen for the films deposited in the hydrogen plasma, and no sign reversal occurs in the films deposited in the argon plasma.
- 社団法人応用物理学会の論文
- 1992-09-01
著者
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KOBAYASHI Hiroaki
Department of Computer and Mathematical Sciences, Graduate School of Information Sciences, Tohoku Un
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Yasuoka Yoshizumi
Department of Electronic Engineering, The National Defense Academy
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Yasuoka Yoshizumi
Department Of Electronic Engineering The National Defense Academy
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Yasuoka Yoshizumi
Department Of Electrical And Electronic Engineering National Defense Academy
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Inoue Narumi
Department Of Electrical And Elecronic Engineering National Defense Academy
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Inoue Narumi
Department Of Electronic Engineering The National Defense Academy
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Kobayashi Hiroaki
Department Of Electronic Engineering The National Defense Academy
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Kobayashi Hiroaki
Department Of Applied Chemistry School Of Engineering The University Of Tokyo
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