Annealing of Excimer-Laser-Ablated BaTiO_3 Thin Films
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概要
- 論文の詳細を見る
Thin films of BaTiO<SUB>3</SUB> have been deposited on quartz substrates by the excimer laser ablation method. The effects of substrate temperature, oxygen pressure and post-deposition annealing were investigated. At substrate temperatures above 300°C, randomly oriented crystalline BaTiO<SUB>3</SUB> films with a tetragonal structure were obtained, and the crystallinity was independent of oxygen pressure during the deposition. The film with a-axis preferred orientation perpendicular to the substrate surface was obtained by annealing at 1000°C for 60 minutes.
- 日本真空協会の論文
- 1994-02-20
著者
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Inoue N
National Defense Acad. Yokosuka Jpn
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Inoue N
Oki Electric Ind. Co. Ltd. Tokyo Jpn
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Inoue Narumi
Department Of Electrical And Elecronic Engineering National Defense Academy
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KASHIWABARA Shigeru
Department of Electrical Engineering, The National Defense Academy
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FUJIMOTO Ryozo
Department of Electrical Engineering, Nippon Bunri University
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TOSHIMA Shigetada
Department of Electrical Engineering, The National Defense Academy
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Fujimoto Ryozo
Department Of Electrical Engineering Nippon Bunri University
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Toshima Shigetada
Department Of Electrical Engineering The National Defense Academy
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Kashiwabara S
National Defense Acad. Yokosuka Jpn
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Kashiwabara Shigeru
Department Of Electrical Engineering National Defense Academy
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