Controllable Change of Photoluminescence Spectra of Silicone Rubber Modified by 193 nm ArF Excimer Laser
スポンサーリンク
概要
- 論文の詳細を見る
Photoluminescence spectra of silicone rubber ([SiO(CH3)2]n) photochemically modified by a 193 nm ArF excimer laser was found to be controllable. Compared with the modification in air, the photoluminescence spectra could be blueshifted by the modification in vacuum or the additional irradiation of ArF excimer laser in vacuum after the modification in air. To redshift, on the other hand, the additional irradiation of a 157 nm F2 laser in air after the modification in air, the modification in oxygen gas, or the postannealing after the modification in oxygen gas was effective. The blue and redshifts of the photoluminescence were essentially due to the acceleration of reduction and oxidation reactions of silicone rubber, respectively, because the photoluminescence derives its origin from oxygen deficiency centers and peroxy centers of the silica structure in the modified silicone rubber. On the basis of the spectra changes, colorful light-guiding sheets made of silicone rubber under illumination of a 375 nm light-emitting diode were successfully fabricated for cellular phone use.
- 2009-12-25
著者
-
Inoue Narumi
Department Of Electrical And Elecronic Engineering National Defense Academy
-
Okoshi Masayuki
Department Of Electrical And Electronic Engineering National Defense Academy
-
Iyono Minako
Department of Electrical and Electronic Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
関連論文
- Refractive Index Control of SiO_2 Films by Pulsed Laser Deposition with Silicone Targets
- Photochemical Modification of Silicone Films Using F_2 Laser for Selective Chemical Etching
- Pulsed Laser Deposition of Polymethylphenylsilane Films by Optical-Parametric-Amplified Femtosecond Laser Pulses
- Pulsed Laser Deposition of Corrosion-Resistant Iron Thin Films
- An Analysis of EBIC Response of ITO/poly-Si Solar Cells : I-1: POLYCRISTALLINE SILICON SOLAR CELLS
- A New Pulsed Laser Deposition Method Using an Aperture Plate
- Annealing of Excimer-Laser-Ablated BaTiO_3 Thin Films
- Deposition of BaTiO_3 Thin Films by ArF Excimer Laser Ablation
- Thin Film Deposition of Photoluminescent Silicone Rubber by Pulsed Laser Deposition
- Photocatalytic TiO_2 Fine Particle Films Fabricated by Pulsed Laser Deposition
- Area-Selective Deposition of Diamond-Like Carbon Films onto Silicone Rubber by Femtosecond Laser
- Growth of Periodic SiO2 Nanostructures Using a 157 nm F2 Laser
- Fabrication of SiO_2-Humps on Silicone Rubber Using F_2 Laser : Optics and Quantum Electionics
- SiO_2 Humps Formed on Silicone Rubber by F_2 Laser Irradiation
- Pulsed Laser Deposition of SiO_2 Thin Films with Dimethylpolysiloxane Targets
- Laser Ablation of Silicone Rubber for Fabricating SiO_2 Thin Films : Optics and Queantum Electronics
- Comparison of Ta_2O_5 Thin Films Deposited by "Off-axis" and "On-axis" Pulsed Laser Deposition Technique
- n-InSb Point Contact Warm Carrier Infrared Laser Detectors : Waves, Optics and Quantum Electronics
- Bias Voltage Dependence of the Detected Voltage in MOM Devices
- F2 Laser Photochemical Welding of Aligned Silica Microspheres to Silicone Rubber
- Surface and Interface Modifications of Aluminum Thin Films on Silica Glass Substrate Using 157 nm F2 Laser for Selective Metallization
- Synthesis of Microcrystals from Frozen Acetone Irradiated by a Femtosecond Laser : Optics and Quantum Electronics
- Pulsed Laser Deposition of β-FeSi_2 Films
- Formation of Transparent SiO2 Protective Layer on Polycarbonate by 157 nm F2 Laser for Lightweight Automobile Window
- Controllable Change of Photoluminescence Spectra of Silicone Rubber Modified by 193 nm ArF Excimer Laser
- An Antenna-Coupled Warm Carrier Device Using Polycrystalline Ge Films : Waves, Optics and Quantum Electronics
- P-N Conversion of Poly-Ge Films Fabricated by Plasma Assisted Deposition
- CO_2 Laser Detection Using a Warm Carrier Device Fabricated by Evaporated Ge Films
- SiO2 Humps Formed on Silicone Rubber by F2 Laser Irradiation
- Formation of High-Density Dislocations and Hardening in Femtosecond-Laser-Shocked Silicon
- Laser Wavelength Dependence on Photochemical Surface and Interface Modifications of Aluminum Thin Films on Silica Glass
- Fluorine-Doped SiO2 Films Made from Silicone and Polytetrafluoroethylene Using an F2 Laser
- Improvement of Photocatalytic Efficiency of TiO2 Thin Films Prepared by Pulsed Laser Deposition
- Ablation of Silicone Rubber Using UV-Nanosecond and IR-Femtosecond Lasers
- Wavelength Dependence of Femtosecond Pulsed Laser Deposition of Zinc Oxide Films
- Microlenses Fabricated on Silicone Rubber Using F2 Laser
- Photochemical Bonding of Aligned Silica Microspheres by F2-Laser-Induced Chemical Vapor Deposition
- White-Light Emission from Silicone Rubber Modified by 193 nm ArF Excimer Laser
- Photochemical Deposition of SiO2 Thin Films Using an F2 Laser
- Photochemical Modification of Silicone Films Using F2 Laser for Selective Chemical Etching
- Photochemical Surface Modification of Silicone Rubber into Photoluminescent Material by 193 nm ArF Excimer Laser Irradiation
- Femtosecond Laser Ablation of Polyethylene
- Pulsed Laser Deposition of Polymethylphenylsilane Films by Optical-Parametric-Amplified Femtosecond Laser Pulses