Photochemical Bonding of Aligned Silica Microspheres by F2-Laser-Induced Chemical Vapor Deposition
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概要
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Aligned fused silica (SiO2) microspheres 2.5 μm in diameter were photochemically bonded with SiO2 by 157 nm F2-laser-induced chemical vapor deposition with a gaseous silicone ([SiO(CH3)2]n) source for optical waveguide applications. The refractive index of the deposited SiO2 could be closely adjusting by the single-pulse fluence and irradiation time of an F2 laser, as well as the refractive index of SiO2 to that of silica microspheres, i.e., 1.45 at 633 nm wavelength. The deposited material was carbon-free SiO2, as analyzed by X-ray photoelectron spectroscopy and IR spectroscopy. The factors of the refractive index change induced by varying single-pulse laser fluence and laser irradiation time were discussed. Under the laser irradiation conditions used, the deposited SiO2 successfully filled gaps between silica microspheres with the change in base pressure induced by nitrogen gas purge.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-10-15
著者
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Inoue Narumi
Department Of Electrical And Elecronic Engineering National Defense Academy
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Okoshi Masayuki
Department Of Electrical And Electronic Engineering National Defense Academy
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Cho Jaebong
Department Of Electrical And Electronic Engineering National Defense Academy
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Cho JaeBong
Department of Electrical and Electronic Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
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