Fabrication of SiO_2-Humps on Silicone Rubber Using F_2 Laser : Optics and Quantum Electionics
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概要
- 論文の詳細を見る
The surface of silicone rubber swelled and was modified to a SiO_2 glass layer when irradiated by a 157-nm F_2 laser. Ten minutes of irradiation of the laser with fluence of 14 mJ/cm^2 operating at 20 Hz produced 3-μm-thick SiO_2 humps, but the surface was not modified when a 193-nm ArF laser was used. High photon energy of the F_2 laser may cause the two phenomena. This is a useful new technique which enables both processing and modification to be carried out at the same time.
- 社団法人応用物理学会の論文
- 2002-10-01
著者
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Inoue N
Department Of Electrical And Electronic Engineering National Defense Academy
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Inoue Narumi
Department Of Electrical And Elecronic Engineering National Defense Academy
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OKOSHI Masayuki
Department of Electrical and Electronic Engineering, National Defense Academy
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TAKAO Hiromitsu
Department of Electrical and Electronic Engineering, National Defense Academy
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Okoshi M
Department Of Electrical And Electronic Engineering National Defense Academy
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Inoue Narumi
Superconductivity Research Laboratory International Superconductivity Technology Center
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Takeuchi H
Department Of Parasitology Nara Medical University
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Okoshi Masayuki
Department Of Electrical And Electronic Engineering National Defense Academy
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Takao Hiromitsu
Department Of Electrical And Electronic Engineering National Defense Academy
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