SiO2 Humps Formed on Silicone Rubber by F2 Laser Irradiation
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概要
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An unexpected finding of SiO2 humps on silicone rubber fabricated by a 157 nm F2 laser at a laser fluence less than the ablation threshold was made. The fabrication of the humps which progressed by increasing the number of laser pulses was examined by measuring the height and surface roughness of the humps and by Fourier transform infrared spectroscopy (FT-IR). The FT-IR spectra showed that the position of the Si–O peak of the fabricated hump agreed with that of a synthetic fused silica. The chemical composition of the entire hump was also confirmed to be SiO2 by X-ray photoelectron spectroscopy (XPS). The SiO2 hump could be removed completely by 1 wt% hydrofluoric acid. This finding resulted from swelling of the silicone surface and the subsequent photodissociation of Si–CH3 from the swelled silicone. We could not fabricate the SiO2 humps by a 193 nm ArF laser.
- 2003-03-15
著者
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Inoue Narumi
Department Of Electrical And Elecronic Engineering National Defense Academy
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Okoshi Masayuki
Department Of Electrical And Electronic Engineering National Defense Academy
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Takao Hiromitsu
Department Of Electrical And Electronic Engineering National Defense Academy
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