Laser Wavelength Dependence on Photochemical Surface and Interface Modifications of Aluminum Thin Films on Silica Glass
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概要
- 論文の詳細を見る
Photochemical surface and interface modifications of Al thin films on silica glass were successfully carried out using a 157 nm F2 laser for micropatterning. The surface modification phenomenon was discussed in relation to by changing the laser wavelength using a 193 nm ArF laser or a 266 nm neodymium-doped yttrium aluminum garnet (Nd:YAG) laser. The ArF laser could induce the surface modification of Al thin films to form a protective Al2O3 layer resistant to KOH aqueous solution, similarly to the F2 laser. However, the mechanical hardness of the ArF-laser-irradiated sample was clearly lower than that of the F2-laser-irradiated sample. The origin of the surface modification was examined by irradiating the F2 laser in vacuum. The interface modification phenomenon was analyzed by X-ray photoelectron spectroscopy in the three cases. The adhesion strengths of the samples were also compared. The 266 nm Nd:YAG laser was not effective for the present photochemical modifications.
- 2011-12-25
著者
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Inoue Narumi
Department Of Electrical And Elecronic Engineering National Defense Academy
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Okoshi Masayuki
Department Of Electrical And Electronic Engineering National Defense Academy
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Inoue Narumi
Department of Electrical and Electronic Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
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Iwai Kazufumi
Department of Electrical and Electronic Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan
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Nojiri Hidetoshi
RENIAS Co., Ltd., Mihara, Hiroshima 729-0473, Japan
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Iwai Kazufumi
Department of Electrical and Electronic Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
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Nojiri Hidetoshi
RENIAS Co., Ltd., 200-76 Obara, Nutanishi, Mihara, Hiroshima 729-0473, Japan
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