Pulsed Laser Deposition of Polymethylphenylsilane Films by Optical-Parametric-Amplified Femtosecond Laser Pulses
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概要
- 論文の詳細を見る
Near-IR, 1.3 μm femtosecond (fs) laser pulses through an optical parametric amplifier were used to successfully deposit stoichiometric polymethylphenylsilane (PMPS) films by pulsed laser deposition. Compared with those for 0.79 μm fs laser pulses, the films were deposited faster. The IR absorption spectrum of the film deposited using the 1.3 μm fs laser pulses compared favorably to that of the film deposited using the 0.79 μm fs laser pulses. The deposition of dense films, accompanied by the ejection of droplets from the PMPS target, was realized using both 1.3 and 0.79 μm fs laser pulses.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-03-25
著者
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Inoue Narumi
Department Of Electrical And Elecronic Engineering National Defense Academy
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Kettyarath Ken
Department Of Electrical And Electronic Engineering National Defense Academy
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Okoshi Masayuki
Department Of Electrical And Electronic Engineering National Defense Academy
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Kettyarath Ken
Department of Electrical and Electronic Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
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