Growth of Periodic SiO2 Nanostructures Using a 157 nm F2 Laser
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概要
- 論文の詳細を見る
Periodic nanostructures on SiO2 films were fabricated by Fresnel diffraction of a mask with a square aperture using the photochemical deposition method. In this method, an F2 laser beam at a low laser fluence simultaneously irradiates a silicone rubber target and a substrate through the mask. The SiO2 nanostructures are photochemically grown according to the intensity distribution at room temperature. The fringe period of the nanostructure formed on the substrate corresponded to the calculated results, and can be reduced up to ${\sim}200$ nm by decreasing the distance from the mask to the substrate.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-01-15
著者
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Inoue N
Department Of Electrical And Electronic Engineering National Defense Academy
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Inoue Narumi
Department Of Electrical And Elecronic Engineering National Defense Academy
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OKOSHI Masayuki
Department of Electrical and Electronic Engineering, National Defense Academy
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TAKAO Hiromitsu
Department of Electrical and Electronic Engineering, National Defense Academy
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Okoshi M
Department Of Electrical And Electronic Engineering National Defense Academy
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Okoshi Masayuki
Department Of Electrical And Electronic Engineering National Defense Academy
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Takao Hiromitsu
Department Of Electrical And Electronic Engineering National Defense Academy
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