Laser Ablation of Silicone Rubber for Fabricating SiO_2 Thin Films : Optics and Queantum Electronics
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概要
- 論文の詳細を見る
We deposited SiO_2 thin films at room temperature by 193-nm ArF excimer laser ablation of silicone rubber in oxygen atmosphere. (Si-O)_n chains were selectively ejected from silicone rubber targets by ablation in high laser fluence at about 10 J/cm^2. Oxygen gas worked to oxidize the ejected (Si-O)_n chains to form SiO_2 thin films at the gas pressure of 4.4 × 10^<-2> Torr, in addition to reducing the isolated carbon mixed into the films. The transmittance of the 400-nm-thick filrns was 95% at a 500 nm wavelength. The refractive index of the films was defined as 1.4 to 1.5.
- 社団法人応用物理学会の論文
- 2001-01-15
著者
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Inoue N
Department Of Electrical And Electronic Engineering National Defense Academy
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Inoue Narumi
Department Of Electrical And Elecronic Engineering National Defense Academy
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OKOSHI Masayuki
Department of Electrical and Electronic Engineering, National Defense Academy
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Okoshi M
Department Of Electrical And Electronic Engineering National Defense Academy
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Inoue Narumi
Superconductivity Research Laboratory International Superconductivity Technology Center
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KURAMATSU Masaaki
Department of Electrical and Electronic Engineering, National Defense Academy
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Okoshi Masayuki
Department Of Electrical And Electronic Engineering National Defense Academy
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Kuramatsu Masaaki
Department Of Electrical And Electronic Engineering National Defense Academy
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