Photochemical Modification of Silicone Films Using F2 Laser for Selective Chemical Etching

概要

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Silicone ([SiO(CH3)2]n) films were photochemically modified into SiO2 by irradiation with a 157 nm F2 laser. The dissociation of Si–CH3 bonds of silicone simply depended on the photon number of the F2 laser. The quantum yield of the modification was estimated to be approximately $1\times 10^{-2}$. Mechanisms of oxidation and O–H production in the modified films were clarified. The depth of the modification was not limited by the absorption coefficient of silicone because SiO2 of the modified films is transparent for the F2 laser. A fine pattern of the 1.5-μm-thick silicone films could be fabricated by immersing the modified samples in 0.2 wt% hydrogen fluoride solution.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2004-06-15