Barrier Parameters of Tungsten-Nickel Point Contact Diodes
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概要
- 論文の詳細を見る
Current-voltage and current-temperature characteristics of tungsten-nickel point contact diodes with interface barriers 500 to 1500 A thick are investigated in order to obtain the contact area and barrier heights on each side. It is found that the barrier height on the nickel side is about 0.39 eV and that on the tungsten side is about 0.34 eV, and that the contact area is of the order of 1×10^<-11> to 1×10^<-12>cm^2.
- 社団法人応用物理学会の論文
- 1980-08-05
著者
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Yasuoka Yoshizumi
Department Of Electrical And Electronic Engineering National Defense Academy
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Sakurada Tomomi
Department Of Electrical Engineering National Defence Acadymy
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Sakurada Tomomi
Department Of Electrical Engineering National Defense Academy
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YASUOKA Tomokazu
Department of Electrical Engineering, National Defense Academy
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Yasuoka Tomokazu
Department Of Electrical Engineering National Defense Academy
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SAKURADA TOMOMI
Department of Biochemistry, School of Medicine, Keio University
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