Detection Properties of Thin-Film Slot-Antenna-Coupled GaAs Schottky Barrier Diodes
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概要
- 論文の詳細を見る
GaAs Schottky barrier diodes (SBDs) coupled with a thin-film slot antenna were fabricated using a microfabrication technique, and video detection and mixing properties were investigated at 94 GHz. In the video detection, the bias voltage dependence of detected voltage showed almost the same variation with the calculated value derived from the theory of square-law detection. It was confirmed that detected voltage was obtained from the nonlinearity of the current–voltage ($I$–$V$) characteristic of the device. A Si extended hemispherical lens was coupled to the device to improve device responsivity. The increase in detected voltage was 22.2 dB upon using a lens with a radius of 10 mm, and a noise equivalent irradiance (NEI) of $1.2\times 10^{-10}$ W/(cm2$\cdot$Hz1/2) was obtained. In the mixing, IF signals were observed up to a harmonic number of 7 using the thin-film GaAs SBD.
- 2009-08-25
著者
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Idehara Toshitaka
Research Center For Development Of Far Infrared Region Fukui University
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Yasuoka Yoshizumi
Department Of Electrical And Electronic Engineering National Defense Academy
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Tachiki Takashi
Department Of Bioscience & Technology Faculty Of Science & Engineering Ritsumeikan Universit
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Uchida Takashi
Department of Electrical and Electronic Engineering, National Defense Academy
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Idehara Toshitaka
Research Center for Development of Far-Infrared Region, Fukui University, 3-9-1 Bunkyo, Fukui 910-8507, Japan
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Hayashi Kosuke
Department of Electrical and Electronic Engineering, National Defense Academy, 1-10-20 Hashirimizu, Yokosuka, Kanagawa 239-8686, Japan
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Furuya Takashi
Research Center for Development of Far-Infrared Region, Fukui University, 3-9-1 Bunkyo, Fukui 910-8507, Japan
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Uchida Takashi
Department of Clinical Pharmaceutical Sciences, School of Pharmaceutical Sciences, Kumamoto University
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