Numerical Method to Fit the Refractive Index Profile of Planar Microlenses Made by Ion Exchange Techniques
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-08-01
著者
-
IGA Kenichi
Tokyo Institute of Technology, Nagatsuta Campus, Research Laboratory of Precision Machinery and Elec
-
Iga Kenichi
Microsystem Research Center P & I Lab . Tokyo Institute Of Technology
-
Rios S
Univ. La Laguna Esp
-
Iga Kenichi
Tokyo Institute Of Technology
-
Acosta E
Univ. Santiago De Compostela Esp
-
ACOSTA Eva
Laboratorio de Optica, Departmento de Fisica Aplicada, Facultad de Fisica Universidad de Santiago de
-
RIOS Susana
Laboratorio de Optica, Departmento de Fisica Aplicada, Facultad de Fisica Universidad de Santiago de
-
OIKAWA Masahiro
Nippon Sheet Glass Co., Ltd.
-
SATO Akimitsu
Nippon Sheet Glass Co., Ltd.
-
Oikawa Masahiro
Nippon Sheet Glass Co. Ltd.
-
Sato Akimitsu
Nippon Sheet Glass Co. Ltd.
関連論文
- Hollow Optical Waveguide for Temperature-Insensitive Photonic Integrated Circuits : Optics and Quantum Electronics
- Photoluminescence and Lasing Characteristics of GaInNAs Quantum Wells Using GaInAs Intermediate Layers
- Nitrogen Composition and Growth Temperature Dependence of Growth Characteristics for Self-Assembled GaInNAs/GaAs Quantum Dots by Chemical Beam Epitaxy
- 1.4μm GaInNAs/GaAs Quantum Well Laser Grown by Chemical Beam Epitaxy : Short Note
- Temperature Characteristics of λ= 1.3μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy(Special Issue on Recent Progress in Semiconductor Lasers and Light-Emitting Devices)
- Polarization Characteristics of MOCVD Grown GaAs/GaAlAs CBH Surface Emitting Lasers
- Design and Lasing Operation of Micro-Arc-Ring Lasers
- A Method of Polarization Stabilization in Surface Emitting Lasers
- Intensity Noise of GaAlAs / GaAs Surface Emitting Laser
- Refractive Index Variation in GaInAsP/InP Quantum Confined Structures Grown by Chemical Beam Epitaxy
- Lasing Characteristics of Low-Threshold GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition : Optics and Quantum Electronics
- Lasing Characteristics of 1.2 μm Highly Strained GaInAs/GaAs Quantum Well Lasers
- Tunnel Junction for Long-Wavelength Vertical-Cavity Surface-Emitting Lasers : Optics and Quantum Electronics
- Design and Fabrication of InGaAs/GaAs Quantum Wires for Vertical-Cavity Surface-Emitting Lasers
- Evaluation of Numerical Aperture and Focusing Characteristics of Planar Microlens for Optical Interconnects : Optics and Quantum Electronics
- Parallel Optical-Transmission Module Using Vertical-Cavity Surface-Emitting Laser Array and Micro-Optical Bench (MOB) : Optics and Quantum Electronics
- Collimation Characteristics of Planar Microlens for Parallel Optical Interconnect
- Fundamental Study of Parallel Moduling Scheme Based on a Micro-Optical Bench and Collimating Planar Microlenses
- A Bidirectional Optical Module Based on Stacked Planar Optical Circuit
- Two-Dimensional Alignment-Free Optical Interconnect Using Micro Optical Bench Scheme
- An Optical Network Unit (ONU) Chip Based on Stacked Planar Optics
- A Microoptic Network Unit Using Planar Microlens Array
- Optical Dispersion Characteristics of Planar Microlenses
- Self-Aligning Optical Interconnect Scheme Using Put-in Microconnector (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
- Improved Theory for Carrier Leakage and Diffusion in Multiquantum-well Semiconductor Lasers
- Strained Layer Multiquantum Barriers with Improved Carrier Injection and Confinement
- Strained-Layer Multi-Quantum Barriers for Reducing Hot Electron Leakage in Long-Wavelength Semiconductor Lasers
- Optical Pattern Recognition Experiments of Walsh Spatial Frequency Domain Filtering Method
- Optical Pattern Recognition System Based on Parallel Spatial Filtering Using Synthetic Discriminant Function
- Carrier Transport in p-Type GaInAsP/InP Distributed Bragg Reflectors
- Estimation of Optical Phase Aberrations of Micro-Optics Components by the Irradiance Transport Equation
- New Treatment for Tomographic Reconstruction of Refractive Index Profiles of Inhomogeneous Objects from Slope Measurements
- Numerical Method to Fit the Refractive Index Profile of Planar Microlenses Made by Ion Exchange Techniques
- Transverse-Mode Characteristics of InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers Considering Gain Offset
- Reflection Induced Voltage Change of Surface Emitting Laser for Optical Probing
- Monolothic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B
- High Power GaInAsP/InP Strained Quantum Well Superluminescent Diode with Tapered Active Region
- Evaluation of MQW Wafer for Surface-Emitting Laser by X-Ray Diffraction
- GaAlAs/GaAs MOCVD Growth for Surface Emitting Laser
- Electron Wave Reflection by Multiquantum Barrier
- Potential Barrier Height Analysis of AlGaInP Multi-Quantum Barrier (MQB)
- Photoluminescence Study of Electron Wave Confinement in Multi-Quantum Barrier (MQB)
- Growth and Characterization of Vertical-Cavity Surface-Emitting Lasers Grown on (311)A-Oriented GaAs Substrates by Molecular Beam Epitaxy
- Focusing Characteristics of Convex-Shaped Distributed-Index Microlens
- Low Threshold GaInAsP Lasers with Semiconductor/Air Distributed Bragg Reflector Fabricated by Inductively Coupled Plasma Etching
- Theoretical and Experimental Estimations of Photon Recycling Effect in Light Emitting Devices with a Metal Mirror
- Continuous Wave GaInAsP/InP Surface Emitting Lasers with a Thermally Conductive MgO/Si Mirror
- A Novel Birefringent Distributed Bragg Reflector Using a Metal/Dielectric Polarizer for Polarization Control of Surface-Emitting Lasers
- GaInAsP/InP Low-Mesa CPBH Surface Emitting Laser with an Optimally Deposited MgO/Si Multilayer Laser Mirror
- A Low-Threshold 1.3μm GaInAsP/InP Flat-Surface Circular Buried Heterostructure Surface Emitting Laser
- GaInAsP/InP DH Laser with a Current Blocking Layer Made by Be Implantation
- GaAlAs/GaAs Optical Beam Scanner Using Phased Array Waveguides
- LPE Growth of Ga_xIn_As_yP_/InP Double Heterostructure with Thick Active Layer (λ_g=1.5-1.6μm)
- Design and Fabrication Process of Optically Pumped GaInAsP/InP Stripe Laser with Resonant Pumping for High-Power Operation : Optics and Quantum Electronics
- GaAlAs/GaAs Surface Emitting Laser with High Reflective TiO_2/ SiO_2 Multilayer Bragg Reflector
- A Trial Fabrication of Circular Buried Heterostructure (CBH) GaAlAs/GaAs Surface Emitting Laser by Using Selective Meltback Method
- Fabrication of Planar Microlens by Transverse Electromigration Method
- Ray Tracing in a Distributed-Index Planar Micro-Lens
- Relaxation and Delay in Oscillations of GaInAsP/InP DH-Lasers
- GaInAsP/InP DH Laser Grown by Newly Designed Vertical LPE Furnace
- Threshold Condition and Design of Surface Emitting GaInAsP/InP Injection Lasers : B-2: LD AND LED-1
- GaInAsP/InP Surface Emitting Injection Laser with Buried Heterostructures
- Composition Dependence of Thermal Annealing Effect on 1.3 μm GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy : Semiconductors
- Thermal Annealing of GaInNAs/GaAs Quantum Wells Grown by Chemical Beam Epitaxy and Its Effect on Photoluminescence
- Optical Branching Device for Arrayed Waveguides
- Optical Beam Scanner with Phase-Variable Semiconductor Waveguides
- 1.12μm PolariZation Controlled Highly Strained GalnAs Vertical-Cavity Surface-Emitting Lasers on GaAs(311)B by Metal Organic Chemical Vapor Deposition : Optics and Quantum Electronics
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter (Joint Special Issue on Recent Progress in Optoelectronics and Communications)
- GaInAs/GaAs Single Mode Vertical Cavity Surface Emitting Laser (VCSEL) Array on GaAs (311) B(Special Issue on Optical Interconnects/Optical Signal Processing)
- An Optical Absorption Property of Highiy Beryllium-Doped GaInAsP Grown by Chemical Beam Epitaxy
- Room-Temperature Observation of Excitonic Absorption in Ga_xIn_As/InP (0.2≤x≤0.47) Quantum Wells Grown by Chemical Beam Epitaxy
- GaInAs/InP Quantum Wells and Strained-Layer Superlattices Grown by Chemical Beam Epitaxy
- Highly Beryllium-Doped GaInAs Grown by Chemical Beam Epitaxy
- Cracking Yield Dependence of InP Growth by Chemical Beam Epitaxy
- Study of Inelastic Scattering Effect in Unstrained and Strain-Compensated GaInAs/GaInP Multiquantum Barriers
- Strain-Compensated Multi-Quantum Barriers for Reduction of Electron Leakages in Long-Wavelength Semiconductor Lasers
- Low-Threshold GaInAsP/InP Transmission-Type Surface Emitting Laser
- Parallel Optical Walsh Expansion in a Pattern Recognition Preprocessor Using Planar Microlens Array
- Change of Refractive Index Profile during Heat-Treatment Process in Fabricating Plastic Focusing Fiber Lens
- GaInAsP/InP CBH Surface-Emitting Laser with a Dielectric Multilayer Reflector
- Coupling Efficiency between Domed Structure LEDs and Gradient Index Fibers
- Proposal of Optically Pumped Tunable Surface Emitting Laser : Optics and Quantum Electronics
- Array of Distributed-Index Planar Micro-Lenses Prepared from Ion Exchange Technique
- Comparison of Luminescence from InP Processed by Reactive Ion Beam Etching
- A Study on Etching Parameters of a Reactive Ion Beam Etch for GaAs and InP
- Improvement of a Flat Surface Circular Buried Heterostructure GaInAsP/InP Surface Emitting Laser
- Parallel Photonic Devices and Concepts Good for Optical Interconnects (Special Issue on Optical Interconnection)
- On the Use of Effective Refractive Index in DFB Laser Mode Separation
- Surface Emitting Lasers and Parallel Operating Devices - Fundamentals and Prospects -
- Polarization Control of Surface Emitting Lasers by Anisotropic Biaxial Strain
- A Novel Short-Cavity Laser with Deep-Grating Distributed Bragg Reflectors
- Monolithic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B
- Tunnel Junction for Long-Wavelength Vertical-Cavity Surface-Emitting Lasers
- A Scanning Total Reflection Method for Refractive-Index Profiling