Room-Temperature Observation of Excitonic Absorption in Ga_xIn_<1-x>As/InP (0.2≤x≤0.47) Quantum Wells Grown by Chemical Beam Epitaxy
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概要
- 論文の詳細を見る
Ga_xIn_<1-x>As/InP (0.2≤x≤0.47) lattice-matched and strained quantum wells having 10 wells were grown by chemical beam epitaxy (CBE). The absorption properties were investigated and excitonic absorption peaks were clearly obserbed at room temperature. The wavelengths of excitonic peaks were in good agreemen with a theoretical estimation obtained by using effective mass approximation including heavy and light hole energy at the Γ point.
- 社団法人応用物理学会の論文
- 1991-05-15
著者
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YOKOUCHI Noriyuki
Tokyo Institute of Technology, Precision & Intelligence Laboratory
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MIYAMOTO Tomoyuki
Tokyo Institute of Technology, Precision & Intelligence Laboratory
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Miyamoto Takanori
Ntt Interdisciplinary Research Laboratories
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Iga Kenichi
Tokyo Institute Of Technology
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YOKOUCHI Noriyuki
Yokohama Research and Development Laboratories, Furukawa Electric Co.Ltd.
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Uchida T
Hiroshima Univ. Graduate School Of Biomedical Sci. Hiroshima Jpn
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Koyama Fumio
Tokyo Inst. Technol. Yokohama Jpn
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Yokouchi N
Yokohama Research And Development Laboratories Furukawa Electric Co.ltd.
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UCHIDA Takashi
Tokyo Institute of Technology, Precision & Intelligence Laboratory
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Uchida Toshikazu
Tokyo Institute of Technology
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