Auto-doping of Carbon to AlAs Grown by Metalorganic Chemical Vapor Deposition using Trimethylaluminum and Tertiarybutylarsine
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概要
- 論文の詳細を見る
Carbon (C) heavily doped AlAs has been grown by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum (TMAI) and tertiarybutylarsine (TBA) without any additional dopant sources. The hole concentration was controlled by changing only the V/III ratio. The highest hole concentration was 2.5×10^<19>cm^<-3>. The decrease in the lattice constant of C-doped AlAs shows that the acceptor activation ratio is close to unity.
- 社団法人応用物理学会の論文
- 1997-05-15
著者
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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MIYAMOTO Tomoyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Miyamoto Takanori
Ntt Interdisciplinary Research Laboratories
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SEKIGUCHI Shigeaki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Shinada S
National Institute Of Information And Communications Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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Miyamoto Tomoyuki
Precision and Intelligence Lab, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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