InAs Quantum Dot Growth on a Thin GaNP Buffer Layer on GaP by Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
InAs quantum dots (QDs) on a 2-nm-thick GaNP buffer layer on GaP were investigated using low-pressure metalorganic chemical vapor deposition. The InAs QDs density was significantly increased from 2.6\times 10^{9} to 2.0\times 10^{10} cm-2 by increasing the nitrogen composition from 0 to 4.5% in GaNP. The formation characteristics of InAs QDs were also investigated at various InAs supply amounts from 0.7 to 2.5 monolayers (ML). The generation of QDs on the GaNP and GaP buffer layers started at the InAs supplies of 1.0 and 1.1 ML, respectively. Since the lattice mismatches were large, these supply amounts were definitely smaller than that on GaAs.
- 2012-08-25
著者
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MIYAMOTO Tomoyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology
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Kobayashi Yoshitaka
Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Tanabe Satoru
Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Nishio Rei
Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Suzuki Ryoichiro
Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Suzuki Ryoichiro
Precision and Intelligence Lab, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Miyamoto Tomoyuki
Precision and Intelligence Lab, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Miyamoto Tomoyuki
Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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