Large kink characteristics in light output of tunnel injection quantum well lasers
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Miyamoto Tomoyuki
Precision and Intelligence Lab, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Higa Yasutaka
Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Nakajima Hiroshi
Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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Sorimachi Mikio
Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
関連論文
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- Chemical Beam Epitaxy Growth and Characterization of GaNAs/GaAs
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- GaInAsP/InP Multi-Quantum Barrier (MQB) Grown by Chemical Beam Epitaxy (CBE)
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- Effect of Surface Quality on Overgrowth of Highly Strained GaInAs/GaAs Quantum Wells and Improvement by a Strained Buffer Layer
- Quality Improvement of GaInNAs/GaAs Quantum Well Growth by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
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- Post-thermal Annealing Effects on Photoluminescence Properties of InAs Quantum Dots on GaNAs Buffer Layer
- Large kink characteristics in light output of tunnel injection quantum well lasers
- Well-in-well structure for high-speed carrier relaxation into quantum wells
- InAs Quantum Dot Growth on a Thin GaNP Buffer Layer on GaP by Metalorganic Chemical Vapor Deposition
- Quality Improvement of GaInNAs/GaAs Quantum Well Growth by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine