Well-in-well structure for high-speed carrier relaxation into quantum wells

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Miyamoto Tomoyuki

  Precision and Intelligence Lab, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Higa Yasutaka

  Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Sorimachi Mikio

  Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Nishinome Takuya

  Precision and Intelligence Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

関連論文

• Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs
• Inclusion of Strain Effect in Miscibility Gap Calculations for III-V Semiconductors
• High Temperature Characteristics of Nearly 1.2 μm GaInAs/GaAs/AlGaAs Lasers
• Improvement of Current Injection Uniformity and Device Resistance in Long-Wavelength Vertical-Cavity Surface-Emitting Laser Using a Tunnel Junction
• Long Wavelength GaInAsP/InP Laser with n-n Contacts Using AlAs/InP Hole Injecting Tunnel Junction
• Chemical Beam Epitaxy Growth and Characterization of GaNAs/GaAs
• GaInNAs/GaAs Quantum Well Growth by Chemical Beam Epitaxy
• Multilayer InAs Quantum Dot with GaNAs Strain Compensation Layers Partly Inserted in a Thin Spacer Layer
• GaInAsP/InP Multi-Quantum Barrier (MQB) Grown by Chemical Beam Epitaxy (CBE)
• GaInAsP/InP Surface Emitting Lasers Grown by Chemical Beam Epitaxy and Wavelength Tuning Using an External Reflector
• Effect of Surface Quality on Overgrowth of Highly Strained GaInAs/GaAs Quantum Wells and Improvement by a Strained Buffer Layer
• Quality Improvement of GaInNAs/GaAs Quantum Well Growth by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
• Auto-doping of Carbon to AlAs Grown by Metalorganic Chemical Vapor Deposition using Trimethylaluminum and Tertiarybutylarsine
• Post-thermal Annealing Effects on Photoluminescence Properties of InAs Quantum Dots on GaNAs Buffer Layer
• Large kink characteristics in light output of tunnel injection quantum well lasers
• Well-in-well structure for high-speed carrier relaxation into quantum wells
• InAs Quantum Dot Growth on a Thin GaNP Buffer Layer on GaP by Metalorganic Chemical Vapor Deposition
• Quality Improvement of GaInNAs/GaAs Quantum Well Growth by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine

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