Mass Effect of Etching Gases in Vertical and Smooth Dry Etching of InP
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概要
- 論文の詳細を見る
We compared several kinds of etching gases in inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) plasma etching processes for investigating the etching performance. It was found that a heavy etching gas such as SiCl4 plays an important role for smooth etching of InP, which is independent of ICP and ECR plasma sources.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-03-15
著者
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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MUTA Seiichi
Samco International Inc.
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Matsutani Akihiro
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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Ohtsuki Hideo
Samco Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan
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Ohtsuki Hideo
Samco International Inc., 36 Tanakamiya-cho, Takeda, Fujimi-ku, Kyoto 612-8443, Japan
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Iga Kenichi
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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