Reactive Ion Etching of Si Using Ar/F2 Plasma
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概要
- 論文の詳細を見る
We investigated the Si dry etching process using Ar/F2 plasma. A vertical etching profile and a smooth etched surface, which satisfy the requirements for optical device fabrication, were obtained. The etching rate of Si was approximately 0.1 μm/min at 5 Pa and 150 W. We believe that Ar/F2 plasma etching is a very simple and useful process for fabricating Si-based optical devices, such as photonic crystals, narrow optical waveguides, and micro-electro-mechanical systems (MEMS). In addition, this etching process is suitable for the protection of the earth environment, because the global warming potential (GWP) of F is 0.
- 2010-06-25
著者
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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Matsutani Akihiro
Center for Semiconductor and MEMS Processes, Technical Department, Tokyo Institute of Technology, R2-3, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Ohtsuki Hideo
Samco Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan
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Hideo Ohtsuki
Samco Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan
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Matsutani Akihiro
Center for Semiconductor and MEMS Processes, Technical Department, Tokyo Institute of Technology, R2-21, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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Akihiro Matsutani
Center for Semiconductor and MEMS Processes, Technical Department, Tokyo Institute of Technology, R2-3, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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