Iodine Solid Source Inductively Coupled Plasma Etching of InP
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概要
- 論文の詳細を見る
We have demonstrated vertical and smooth inductively coupled plasma (ICP) dry etching of InP using solid iodine as a gas source at a low process temperature of 90°C. We prepared a solid iodine crystal in the ICP etching chamber as the etching gas source. Iodine gas was supplied from the solid source at a high vapor pressure into the process chamber. Vertical and smooth etching was realized under the condition of low temperature and low power. The typical etching rate was 0.4 μm/min. We believe that solid I2-ICP etching is a very simple and useful process for InP-based device fabrication with a resist mask.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2005-04-10
著者
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Matsutani Akihiro
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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Ohtsuki Hideo
Samco Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan
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