Proposal of gain-matched VCSELs with a thermally actuated MEMS structure for wide temperature operations
スポンサーリンク
概要
- 論文の詳細を見る
We propose a novel gain-matched VCSEL with a thermally actuated cantilever structure, which enables the lasing wavelength to be matched with a gain-peak wavelength even under wide temperature changes. The proposed structure includes an AlxOy layer in an air-gap cavity, which results in the increase of the temperature dependence of lasing wavelengths. The modeling result shows a potential of wide temperature operations of over 200K.
- The Institute of Electronics, Information and Communication Engineersの論文
著者
-
Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
-
Sano Hayato
Precision & Intelligence Laboratory, Tokyo Institute of Technology
関連論文
- Correlation Length Measurement of Sidewall Roughness of Dry Etched Facet and Its Effect on Reflectivity
- GaInAs/GaAs Micro-Arc Ring Semiconductor Laser
- Characterization of Residual Stress in Active Region due to AlAs Native Oxide of Vertical-Cavity Surface-Emitting Lasers
- In situ Observation of Etching Profile in Inductively Coupled Plasma Etching of GaAs and InP using Long Distance Microscope
- InGaAs/GaAs Strained Quantum Well Lasers with Etched Micro-Corner Reflectors
- GaInAsP Microcylinder (Microdisk) Injection Laser With AlInAs (O_x) Claddings : Optics and quantum Electronics
- Optical Quality Dependence on Growth Rate for Metalorganic Chemical Vapor Deposition Grown GaInNAs/GaAs
- Inclusion of Strain Effect in Miscibility Gap Calculations for III-V Semiconductors
- High Temperature Characteristics of Nearly 1.2 μm GaInAs/GaAs/AlGaAs Lasers
- Improvement of Current Injection Uniformity and Device Resistance in Long-Wavelength Vertical-Cavity Surface-Emitting Laser Using a Tunnel Junction
- Long Wavelength GaInAsP/InP Laser with n-n Contacts Using AlAs/InP Hole Injecting Tunnel Junction
- Design and Fabrication of InGaAs/GaAs Quantum Wires for Vertical-Cavity Surface-Emitting Lasers
- Chemical Beam Epitaxy Growth and Characterization of GaNAs/GaAs
- GaInNAs/GaAs Quantum Well Growth by Chemical Beam Epitaxy
- Chemical Beam Epitaxy Growth and Characterization of Ga(In)NAs/GaAs
- Near-Field Analysis of Micro-Aperture Surface Emitting Laser for High Density Optical Data Storage
- Fabrication of Micro-Aperture Surface Emitting Laser for Near Field Optical Data Storage
- High-Power CW Operation of GalnAsP/InP Superlumlnescent Light-Emitting Diode with Tapered Active Region : Optics and Quantum Electronics
- Low-Temperature Dry Etching of InP by Inductively Coupled Plasma Using HI/Cl_2
- Cl_2-based Inductively Coupled Plasma Etching of InP Using Internal Antenna
- Measurement of Plasma Density for Control of Etching Profile in Inductively Coupled Plasma Etching of InP
- Fabrication of a ZnSe-Based Vertical Fabry-Perot Cavity Using SiO_2/TiO_2 Multilayer Reflectors and Resonant Emission Characteristics
- Emission Spectrochemical Analysis in Dry Etching Process of InP by Cl_2 Inductively Coupled Plasma
- Plasma Diagnostics in Inductively Coupled Plasma Etching Using Cl_2/Xe
- Vertical and Smooth Etching of InP by Cl_2/Xe Inductively Coupled Plasma
- Noise Suppression and Intensity Modulation in Gain-Saturated Semiconductor Optical Amplifiers and Its Application to Spectrum-Sliced Light Sources
- High Power GaInAsP/InP Strained Quantum Well Superluminescent Diode with Tapered Active Region
- Finite Element Analysis of Thermal Characteristics in Continuous Wave Long Wavelength Surface Emitting Lasers (II) : Semiconductor Distributed Bragg Reflectors
- Finite Element Analysis of Thermal Characteristics in Continuous Wave Long Wavelength Surface Emitting Lasers (I) : Dielectric Cavity Structures
- Vertical Cavity Surface-Emitting Laser Array for 1.3μm Range Parallel Optical Fiber Transmissions
- Formation of Highly Conductive p-Type ZnSe Using Li_3N Diffusion
- Threshold Estimation of GaN-Based Surface Emitting Lasers Operating in Ultraviolet Spectral Region
- Selective Etching of GaAs for ZnSe Based Surface Emitting Lasers
- First Room Temperature CW Operation of GaInAsP/InP Surface Emitting Laser
- Heavily p-Type Doped AlAs Growth on GaAs (311)B Substrate Using Carbon Auto-Doping for Low Resistance GaAs/AlAs Distributed Bragg Reflectors
- GaInAs/AlGaInAs Semiconductor Lasers on InP Substrate with AlAs Oxide Current Confinement
- GaInAsP/InP Multi-Quantum Barrier (MQB) Grown by Chemical Beam Epitaxy (CBE)
- GaInAsP/InP Surface Emitting Lasers Grown by Chemical Beam Epitaxy and Wavelength Tuning Using an External Reflector
- Spray Selective Etch Process for Short-Cavity Fabrication of GaAs/GaAlAs Surface Emitting Laser
- P-type AlAs Growth on a GaAs (311)B Substrate Using Carbon Auto-Doping for Low Resistance GaAs/AlAs Distributed Bragg Reflectors
- GaInAs/AlGaInAs Semiconductor Lasers with AlAs Oxide Current Confinement Structure
- 2×2 Multiwavelength Micromachined AIGaAs/GaAs Vertical Cavity Filter Array with Wavelength Control Layer
- Micromachined Semiconductor Vertical Cavity for Temperature Insensitive Surface Emitting Lasers and Optical Filters
- Characterization of Sidewall Damage Induced by Reactive Ion-Beam Etching
- Reactive Ion Beam Etch of GaInAsP/InP Multilayer and Removal of Damaged Layer by Two-Step Etch
- Effect of Surface Quality on Overgrowth of Highly Strained GaInAs/GaAs Quantum Wells and Improvement by a Strained Buffer Layer
- Quality Improvement of GaInNAs/GaAs Quantum Well Growth by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
- Highly Stable Single Polarization Operation of GaInAs/GaAs Vertical-Cavity Surface-Emitting Laser on GaAs(311)B Substrate under High-Speed Modulation
- Vertical-Cavity Surface-Emitting Laser Array on GaAs(311)B Substrate Exhibiting Single-Transverse Mode and Stable-Polarization Operation
- AlAs Oxidation System with H_2O Vaporizer for Oxide-Confined Surface Emitting Lasers
- Noise Suppression of Spectrum-Sliced Incoherent Light Using Long Gain-Saturated Semiconductor Optical Amplifier : Optics and Quantum Electronics
- Interface Recombination Reduction by (NH_4)_2S_x-Passivation in Metalorganic Chemical Vapor Deposition Regrown GaAlAs/GaAs Buried Heterostructure Lasers and Estimation of Threshold Currents in Microeavity Surface Emitting Lasers
- Threshold and Modulation Characteristics of Photon-Recycled Semiconductor Lasers
- A Completely Single-Mode and Single-Polarization Vertical-Cavity Surface Emitting Lasers Grown on GaAs (311)B Substrate
- InGaAs/GaAs Vertical-Cavity Surface Emitting Laser on GaAs (311)B Substrate Using Carbon Auto-Doping
- Etching and Optical Characteristics in GaAs/GaAlAs Surface Emitting Laser Fabrication Using a Novel Spray Etch
- Auto-doping of Carbon to AlAs Grown by Metalorganic Chemical Vapor Deposition using Trimethylaluminum and Tertiarybutylarsine
- Reactive Ion Etching of Si Using Ar/F2 Plasma
- Microfabrication of Si-Based High-Index-Contrast-Grating Structure by Thermal Nanoimprint Lithography and Cl/Xe-Inductively Coupled Plasma Etching (Special Issue : Microprocesses and Nanotechnology)
- Smooth and Vertical Profile Dry Etching of Si Using XeF2 Plasma
- Low Bias Voltage Dry Etching of InP by Inductively Coupled Plasma Using SiCl_4/Ar
- C_ Resist Mask of Electron Beam Lithography for Chlorine-Based Reactive Ion Beam Etching
- Surface Temperature Increase in Reactive Ion Beam Etch and Improvement of Profiles by Multistep Etching
- Measurement of Sidewall Roughness of InP Etched by Reactive Ion Bearn Etching
- Vertical and Smooth Microfabrication of InP Using Simple High-Density Plasma System with SmCo Ring Magnet
- Proposal and Demonstration of AlAs-Oxide Confinement Structure for InP-Based Long Wavelength Lasers
- Generation of Solid-Source H2O Plasma and Its Application to Dry Etching of CaF2
- Solid Source Dry Etching Process for GaAs and InP
- Mass Effect of Etching Gases in Vertical and Smooth Dry Etching of InP
- Plasma Characterization in Chlorine-Based Reactive Ion Beam Etching and Chemically Assisted Ion Beam Etching
- Plasma Diagnostics in Inductively Coupled Plasma Etching Using Cl2/Xe
- Quality Improvement of GaInNAs/GaAs Quantum Well Growth by Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
- Iodine Solid Source Inductively Coupled Plasma Etching of InP
- Proposal of gain-matched VCSELs with a thermally actuated MEMS structure for wide temperature operations