Plasma Characterization in Chlorine-Based Reactive Ion Beam Etching and Chemically Assisted Ion Beam Etching
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概要
- 論文の詳細を見る
We measured the chlorine plasma characteristics in reactive ion beam etching (RIBE) and chemically assisted ion beam etching (CAIBE) process. In the CAIBE process, the energy peak of Cl+ ionized by Ar+ appears in the energy range of 50–70 eV and this Cl+ energy peak increases with an increase of Ar+ energy. We observed that the excited state Cl2 density in CAIBE is lower than that in RIBE as measured by appearance mass spectrometry (AMS).
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-05-15
著者
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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Matsutani Akihiro
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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Iga Kenichi
Precision and Intelligence Laboratory, Tokyo Institute of Technology,
-
Matsutani Akihiro
Precision and Intelligence Laboratory, Tokyo Institute of Technology,
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