Plasma Diagnostics in Inductively Coupled Plasma Etching Using Cl2/Xe
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概要
- 論文の詳細を見る
We investigated the plasma characteristics in an inductively coupled plasma (ICP) etching process using Cl2/Xe by means of a quadrupole mass spectrometer equipped with an ion energy analyzer. It was found that the ion energy of Cl+ increased with decreasing etching pressure, and the quantity of Cl+ increased with decreasing Cl2 flow rate. Ions including etching products such as Si+, Cl+, Xe+ and SiCl$_{x}^{+}$ were observed in the etching plasma. It is suggested from the results of this experiment that the etching profile can be controlled by the in situ monitoring of the quantity of Cl+ ions.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2000-03-15
著者
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Iga Kenichi
Precision & Intelligence Lab., Tokyo Institute of Technology
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Matsutani Akihiro
Precision And Intelligence Laboratory Tokyo Institute Of Technology
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Koyama Fumio
Precision And Intelligence Laboratory Microsystem Research Center Tokyo Institute Of Technology
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Ohtsuki Hideo
Samco Inc., 36 Waraya-cho, Takeda, Fushimi-ku, Kyoto 612-8443, Japan
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Matsutani Akihiro
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta Midori-ku, Yokohama 226-8503, Japan
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Ohtsuki Hideo
Samco International Inc., 33 Tanakamiya-Cho, Takeda, Fujimi-ku, Kyoto 612-8443, Japan
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Iga Kenichi
Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta Midori-ku, Yokohama 226-8503, Japan
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