GaInAsP/InP CBH Surface-Emitting Laser with a Dielectric Multilayer Reflector
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概要
- 論文の詳細を見る
The threshold current of a GaInAsP/InP surface-emitting (SE) injection laser has been reduced to 15 mA (CW) at 77 K. The diameter of circular buried mesa was made smaller (〜18 μmφ), and a 5-pair SiO_2/TiO_2 dielectric multilayer reflector was introduced to a circular buried heterostructure (CBH) SE laser. The threshold exhibited the lowest value ever obtained.
- 社団法人応用物理学会の論文
- 1987-09-20
著者
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Iga Kenichi
Tokyo Institute Of Technology
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Iga Kenichi
Tokyo Institute Of Technology Nagatsuta Campus Research Laboratory Of Precision Machinery And Electr
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Koyama Fumio
Tokyo Inst. Technol. Yokohama Jpn
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WATANABE Isao
Tokyo Institute of Technology, Nagatsuta Campus Research Laboratory of Precision Machinery and Elect
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Koyama Fumio
Tokyo Institute Of Technology Nagatsuta Campus Research Laboratory Of Precision Machinery And Electr
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Watanabe Isao
Tokyo Institute Of Technology Nagatsuta Campus Research Laboratory Of Precision Machinery And Electr
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