GaInAsP/InP Facet Lasers with Chemically-Etched End Mirrors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-10-05
著者
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Sakamoto Yasuo
Rfesearch Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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Wakao Kiyohide
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
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KAMBAYASHI Toshio
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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WAKAO Kiyohide
Rfesearch laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
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Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics
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Kambayashi Toshio
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology:(present Ad
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IGA Kenichi
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
関連論文
- A Distributed-Index Planar Micro-Lens Made of Plastics
- Carrier Lifetime Measurement of GaInAsP/InP Double-Heterostructure Lasers
- GaInAsP/InP Facet Lasers with Chemically-Etched End Mirrors
- A 1.59 μm Wavelength GaInAsP/InP Distributed Feedback Laser with First-Order Grating on Anti-Meltback Layer
- Electron Microscopic Observation of Heterointerface in Ga_xInAs_yP_/InP Grown by Liquid
- Elect-Equimultiple Imaging with Stacked Distributed-Index Planar Microlenses
- Single Transverse Mode Operation of Terraced Substrate GaInAsP/InP Lasers at 1.3μm Wavelength
- Relaxation and Delay in Oscillations of GaInAsP/InP DH-Lasers
- GaInAsP/InP DH Laser Grown by Newly Designed Vertical LPE Furnace
- Image Transmission by a Step-Index Multimode Fiber
- Room Temperature Pulsed Oscillation of GaAlAs/GaAs Surface Emitting Junction Laser Grown by MBE
- GaInAsP/InP Surface Emitting Injection Laser with Buried Heterostructures
- Beryllium Doping for Ga_In_As/InP Quantum Wells by Chemical Beam Epitaxy (CBE)
- Growth of Ga_In_As/InP Double-Heterostructure Wafers by Chemical Beam Epitaxy (CBE)
- Highly Beryllium-Doped and Lattice-Matched GaInAsP/InP Growth by Chemical Beam Epitaxy (CBE)
- Microfabrication of Dielectric Multilayer Reflector by Reactive Ion Etching and Characterization of Induced Wafer Damage
- Comparison of Luminescence from InP Processed by Reactive Ion Beam Etching
- A Study on Etching Parameters of a Reactive Ion Beam Etch for GaAs and InP
- Estimation of Threshold Current of Microcavity Surface Emitting Laser with Cylindrical Waveguide
- Ammonium Sulfide Passivation for AlGaAs/GaAs Buried Heterostructure Laser Fabrication Process
- Linewidth Measurement of a Single Longitudinal Mode AlGaAs Laser with a Fabry-Perot Interferometer
- Trial Fabrication of GaAlAs/GaAs Surface-Emitting Injection Laser
- Chemical Etching of InP and GaInAsP for Fabricating Laser Diodes and Integrated Optical Circuits
- Wave Aberration Testing System for Micro-Lenses by Shearing Interference Method