Image Transmission by a Step-Index Multimode Fiber
スポンサーリンク
概要
- 論文の詳細を見る
We have demonstrated the transmission of two-dimensional images by the use of a single piece of step-index multimode fiber. We have used a pair of slits in front of and behind the fiber and those slits were rotated simultaneously to eliminate skew rays. In each direction of the slits, light from the associated position of the point source was transmitted through the fiber and the image was reconstructed on film. The result shows the applicability of this method of eliminating skew rays to transmit a two-dimensional image through a piece of step-index multimode fiber. Some degradations on the image quality might be eliminated by improving the set up or using computer processing.
- 社団法人応用物理学会の論文
- 1982-12-20
著者
-
Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
-
OIKAWA Masahiro
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
-
Iga Kenichi
Research Laboratory Of Precision Machinery And Electronics
-
BATUBARA John
Research Laboratory of Precision Machinery and Electronics, Tokyo Institute of Technology
-
Batubara John
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology:(present Ad
-
Oikawa Masahiro
Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology
関連論文
- A Distributed-Index Planar Micro-Lens Made of Plastics
- Carrier Lifetime Measurement of GaInAsP/InP Double-Heterostructure Lasers
- GaInAsP/InP Facet Lasers with Chemically-Etched End Mirrors
- A 1.59 μm Wavelength GaInAsP/InP Distributed Feedback Laser with First-Order Grating on Anti-Meltback Layer
- Electron Microscopic Observation of Heterointerface in Ga_xInAs_yP_/InP Grown by Liquid
- Elect-Equimultiple Imaging with Stacked Distributed-Index Planar Microlenses
- Single Transverse Mode Operation of Terraced Substrate GaInAsP/InP Lasers at 1.3μm Wavelength
- Image Transmission by a Step-Index Multimode Fiber
- Room Temperature Pulsed Oscillation of GaAlAs/GaAs Surface Emitting Junction Laser Grown by MBE
- GaInAsP/InP Surface Emitting Injection Laser with Buried Heterostructures
- Beryllium Doping for Ga_In_As/InP Quantum Wells by Chemical Beam Epitaxy (CBE)
- Growth of Ga_In_As/InP Double-Heterostructure Wafers by Chemical Beam Epitaxy (CBE)
- Highly Beryllium-Doped and Lattice-Matched GaInAsP/InP Growth by Chemical Beam Epitaxy (CBE)
- Microfabrication of Dielectric Multilayer Reflector by Reactive Ion Etching and Characterization of Induced Wafer Damage
- Comparison of Luminescence from InP Processed by Reactive Ion Beam Etching
- A Study on Etching Parameters of a Reactive Ion Beam Etch for GaAs and InP
- Estimation of Threshold Current of Microcavity Surface Emitting Laser with Cylindrical Waveguide
- Ammonium Sulfide Passivation for AlGaAs/GaAs Buried Heterostructure Laser Fabrication Process
- Linewidth Measurement of a Single Longitudinal Mode AlGaAs Laser with a Fabry-Perot Interferometer
- Trial Fabrication of GaAlAs/GaAs Surface-Emitting Injection Laser
- Chemical Etching of InP and GaInAsP for Fabricating Laser Diodes and Integrated Optical Circuits
- Wave Aberration Testing System for Micro-Lenses by Shearing Interference Method