Ohba Yasuo | Corporate Research And Development Center Toshiba Corporation

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概要

関連著者

著作論文

Highly Efficient InGaN-Based 383-nm Ultraviolet Light-Emitting Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown AlN Buffer
Room-Temperature CW Operation of GaN-Based Blue-Violet Laser Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown Single-Crystal AlN Buffer Layer
Two-Dimensional Growth of AlN and GaN on Lattice-Relaxed Al_Ga_N Buffer Layers Prepared with High-Temperature-Grown AlN Buffer on Sapphire Substrates and Fabrication of Multiple-Quantum-Well Structures
Mechanism for Reducing Dislocations at the Initial Stage of GaN Growth on Sapphire Substrates Using High-Temperature-Grown Single-Crystal AlN Buffer Layers : Semiconductors

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