Mechanism for Reducing Dislocations at the Initial Stage of GaN Growth on Sapphire Substrates Using High-Temperature-Grown Single-Crystal AlN Buffer Layers : Semiconductors

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概要

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• The initial stage of GaN metalorganic chemical vapor deposition on high-temperature grown A1N (HT-A1N) was studied. A clear three-dimensional island growth was observed. At the first growth phase, the islands rapidly grew and coalesced forming a non-uniform defect distribution. For the second growth phase, deposition balanced with evaporation and a large-scale island/space structure was formed through the selective enlargement of the low defect parts. At the final growth phase, the spaces were filled by lateral growth and the surface was covered by alternately arranged defective and nearly defect-free domains, resulting in an average defect density of 2 × 10^8 cm^<-2>. The selective processes at the second growth phase were found to play an important role in reducing the defects. The elevation of growth ternperature utilizing high-stability HT-AlN is a promising technique for further reduction of the defects.

• 社団法人応用物理学会の論文
• 2002-06-01

著者

• Ohba Yasuo

  Corporate Research And Development Center Toshiba Corporation

• IIDA Susumu

  Corporate Research and Development Center, Toshiba Corporation

• Iida Susumu

  Corporate Research And Development Center Toshiba Corporation

関連論文

• Highly Efficient InGaN-Based 383-nm Ultraviolet Light-Emitting Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown AlN Buffer
• Room-Temperature CW Operation of GaN-Based Blue-Violet Laser Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown Single-Crystal AlN Buffer Layer
• Two-Dimensional Growth of AlN and GaN on Lattice-Relaxed Al_Ga_N Buffer Layers Prepared with High-Temperature-Grown AlN Buffer on Sapphire Substrates and Fabrication of Multiple-Quantum-Well Structures
• Mechanism for Reducing Dislocations at the Initial Stage of GaN Growth on Sapphire Substrates Using High-Temperature-Grown Single-Crystal AlN Buffer Layers : Semiconductors

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