Fabrication of Semiconductor Laser for Integration with Optical Isolator
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概要
- 論文の詳細を見る
As a preliminary experiment for achieving a monolithic integration of a semiconductor laser and an optical isolator, a Fabry–Perot laser integrated with an optical passive waveguide was fabricated using the wafer grown by a selective-area growth technique. We report the characteristics of the laser diode and the loss estimation in the fabricated device.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Nakano Yoshiaki
Graduate School Of Engineering The University Of Tokyo
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Sakurai Kazumasa
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Miyashita Daisuke
Graduate School Of Engineering The University Of Tokyo
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YOKOI Hideki
Graduate School of Science and Engineering, Tokyo Institute of Technology
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Mizumoto Tetsuya
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Sakurai Kazumasa
Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
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Yokoi Hideki
Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
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Mizumoto Tetsuya
Graduate School of Science and Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
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