Effects of Wafer Precleaning and Plasma Irradiation to Wafer Surfaces on Plasma-Assisted Surface-Activated Direct Bonding
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概要
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The plasma-assisted surface-activated bonding technique enables one to directly bond heterogeneous materials. The surface roughness of wafers is an important factor for achieving bonding. The effects of precleaning and plasma surface activation processes on the surface roughness are investigated for silicon-on-insulator (SOI), Ce-substituted yttrium iron garnet (Ce:YIG), InP and LiNbO3. We found that an appropriate precleaning process reduces the surface roughness. Also, the oxygen plasma irradiation to the wafer surface for 10 or 30 s smoothens the surfaces. We achieved the bonding of SOI–Ce:YIG with a strength greater than 1.8 MPa, which is sufficient for application to silicon waveguide optical isolators and circulators.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-08-25
著者
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Mizumoto Tetsuya
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Yoshida Kohei
Graduate School of Science and Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S3-11 Ookayama, Meguro, Tokyo 152-8552, Japan
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Takei Ryohei
Graduate School of Science and Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S3-11 Ookayama, Meguro, Tokyo 152-8552, Japan
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Mizumoto Tetsuya
Graduate School of Science and Engineering, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1-S3-11 Ookayama, Meguro, Tokyo 152-8552, Japan
関連論文
- Magnetic Ceramics Materials with High Permittivity and Low Loss
- Effects of Wafer Precleaning and Plasma Irradiation to Wafer Surfaces on Plasma-Assisted Surface-Activated Direct Bonding
- Design and Simulation of Silicon Waveguide Optical Circulator Employing Nonreciprocal Phase Shift
- Fabrication of Semiconductor Laser for Integration with Optical Isolator